716 resultados para 020400 CONDENSED MATTER PHYSICS

em QUB Research Portal - Research Directory and Institutional Repository for Queen's University Belfast


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This paper presents the basic physics underlying the operation of electron beam ion traps and sources, with the machine physics underlying their operation being described in some detail. Predictions arising from this description are compared with some diagnostic measurements.

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In this paper we describe experimental results on angularly resolved x-ray scatter from a sample of warm dense aluminium that has been created by double sided laser-driven shock compression. The experiment was carried out on the Central Laser Facility of the Rutherford Appleton Laboratory, using the VULCAN laser. The form of the angularly resolved scatter cross-section was compared with predictions based on a series of molecular dynamics simulations with an embedded atom potential, a Yukakwa potential and a bare Coulomb potential. The importance of screening is evident from the comparison and the embedded atom model seems to match experiment better than the Yukawa potential.

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High power lasers are a tool that can be used to determine important parameters in the context of Warm Dense Matter, i.e. at the convergence of low-temperature plasma physics and finite-temperature condensed matter physics. Recent results concerning planet inner core materials such as water and iron are presented. We determined the equation of state, temperature and index of refraction of water for pressures up to 7 Mbar. The release state of iron in a LiF window allowed us to investigate the melting temperature near the inner core boundary conditions. Finally, the first application of proton radiography to the study of shocked material is also discussed.

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Silicon on Insulator (SOI) substrates offer a promising platform for monolithic high energy physics detectors with integrated read-out electronics and pixel diodes. This paper describes the fabrication and characterisation of specially-configured SOI substrates using improved bonded wafer ion split and grind/polish technologies. The crucial interface between the high resistivity handle silicon and the SOI buried oxide has been characterised using both pixel diodes and circular geometry MOS transistors. Pixel diode breakdown voltages were typically greater than 100V and average leakage current densities at 70 V were only 55 nA/ sq cm. MOS transistors subjected to 24 GeV proton irradiation showed an increased SOI buried oxide trapped charge of only 3.45x1011cn-2 for a dose of 2.7Mrad

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The rimming ?ow of a power-law ?uid in the inner surface of a horizontal rotating cylinder is investigated. Exploiting the fact that the liquid layer is thin, the simplest lubrication theory is applied. The generalized run-off condition for the steady-state ?ow of the power-law liquid is derived. In the bounds implied by this condition, ?lm thickness admits a continuous solution. In the supercritical case when the mass of non-Newtonian liquid exceeds a certain value or the speed of rotation is less than an indicated limit, a discontinuous solution is possible and a hydraulic jump may occur in the steady-state regime. The location and height of the hydraulic jump for the power-law liquid is determined.